3DD401 数据手册 ( 数据表 ) - Inchange Semiconductor
零件编号
3DD401
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 150V(Min)
• Wide Area of Safe Operation
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Power amplifier applications.
• Vertical output applications.
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