Description
The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone.
FEATUREs
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
APPLICATION
UHF band amplifier, mixer and oscillator