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A1977-T1B 数据手册 ( 数据表 ) - NEC => Renesas Technology

2SA1977 image

零件编号
A1977-T1B

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12 Pages

File Size
49.1 kB

生产厂家
NEC
NEC => Renesas Technology NEC

FEATURES
• High fT
   fT = 8.5 GHz TYP.
• High gain
   | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
• High-speed switching characterstics
• Equivalent NPN transistor is the 2SC3583.

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零件编号
产品描述 (功能)
PDF
生产厂家
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
California Eastern Laboratories.
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
NEC => Renesas Technology
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Renesas Electronics
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
California Eastern Laboratories.
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology

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