Intel's 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on
board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases
memory flexibility, while contributing to time- and cost-savings.

Automotive Temperature Range:
  -40^OC to +125^OC
Flash Memory Electrical Chip-Erase
   1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
   10ms Typical Byte-Program
   2 Second Chip-Program
1,000 Erase/Program Cycles Minimum over Automotive Temperature Range
12.0V ±5% VPP
High-Performance Read
  120 ns Maximum Access Time
CMOS Low Power Consumption
   30 mA Maximum Active Current
   300mA Maximum Standby Current
Integrated Program/Erase Stop Timer
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
Noise Immunity Features 
   ±10% VCCTolerance
   Maximum Latch-Up Immunity through EPI Processing
ETOXTMIII Flash Nonvolatile Memory Technology
  EPROM-Compatible Process Base
  High-Volume Manufacturing Experience
JEDEC-Standard Pinouts
  32-Pin Plastic DIP
  32-Lead PLCC