Description
The ACE5022AE is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss and resistance to transients are needed.

FEATUREs
● N-Channel
   20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
   20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
   20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-563 (SC-89-6L) package design

APPLICATION
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter