Description
The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 µm and a total gate periphery of 400 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.

FEATUREs
■ Low Noise Figure, 0.6 dB @ 4 GHz
■ 20 dBm Output Power @ 18 GHz
■ High Associated Gain, 13 dB @ 4 GHz
■ High Power Added Efficiency, 25%
■ Broadband Operation, DC–26 GHz
■ Available in Tape and Reel Packaging