General Description
The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6601L is a Green Product ordering option. AO6601 and AO6601L are electrically identical.

FEATUREs
   n-channel                        p-channel
   VDS (V) = 30V                -30V
   ID = 3.4A (VGS = 10V)    -2.3A (VGS = -10V)
   RDS(ON)
   < 60mΩ (VGS = 10V)      < 135mΩ (VGS = -10V)
   < 75mΩ (VGS = 4.5V)     < 185mΩ (VGS = -4.5V)
   < 115mΩ(VGS = 2.5V)    < 265mΩ (VGS = -2.5V)