AO8806(2002) 数据手册 ( 数据表 ) - Alpha and Omega Semiconductor
零件编号
AO8806
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Alpha and Omega Semiconductor
General Description
The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its commondrain configuration.
FEATUREs
VDS (V) = 20V
ID = 6 A
RDS(ON) < 25mΩ (VGS = 4.5V)
RDS(ON) < 30mΩ (VGS = 2.5V)
RDS(ON) < 40mΩ (VGS = 1.8V)
零件编号
产品描述 (功能)
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生产厂家
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
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