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AOD444 数据手册 ( 数据表 ) - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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零件编号
AOD444

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page
5 Pages

File Size
1.5 MB

生产厂家
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER

Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=60V,ID=20A,RDS(ON)<36mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

零件编号
产品描述 (功能)
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生产厂家
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified

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