P-Channel Enhancement Mode MOSFET
FEATUREs
• -30V/-4.6A, RDS(ON) = 52mΩ(typ.) @ VGS= -10V
RDS(ON) = 80mΩ(typ.) @ VGS= -4.5V
• Super High Density Cell Design
• Reliable and Rugged
• SO-8 Package
APPLICATIONs
• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems