FEATURES
1. High cost-performance type of
   PhotoMOS 1 Form B output
2. Low on-resistance
   This has been realized thanks to the
   built-in MOSFET processed by our
   proprietary method, DSD (Double
   diffused and Selective Doping) method.
3. Reinforced insulation of 5,000 V
   More than 0.4 mm internal insulation
   distance between inputs and outputs.
   Conforms to EN41003, EN60950
   (reinforced insulation).
4. Controls low-level analog signals
   PhotoMOS feature extremely low closed
   circuit offset voltage to enable control of
   low-level analog signals without
   distortion.
5. High sensitivity and low on resistance
   Can control max. 0.55 A load current with
5 mA input current.
   Low on-resistance of typ.1Ω
   (AQY412EH).
6. Low-level off-state leakage current

TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Modem
• Telephone equipment
• Electricity, plant equipment
• Sensing equipment