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AS29F040 数据手册 ( 数据表 ) - Alliance Semiconductor

AS29F040 image

零件编号
AS29F040

产品描述 (功能)

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18 Pages

File Size
199.4 kB

生产厂家
Alliance
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Functional description
The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC standard 32-pin TSOP and 32-pin PLCC packages. This device is designed to be programmed an erased in-system with a single 5.0V VCC supply. The device can also be reprogrammed in standard EPROM programmers.


FEATUREs
• Organization:512K words × 8 bits
• Industrial and commercial temperature
• Sector architecture
    - Eight 64K byte sectors
    - Erase any combination of sectors or full chip
• Single 5.0±0.5V power supply for read/write operations
• Sector protection
• High speed 55/70/90/120/150 ns address access time
• Automated on-chip programming algorithm
    - Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
    - Automatically preprograms/erases chip or specified sectors
• 10,000 write/erase cycle endurance
• Low power consumption
    - 30 mA maximum read current
    - 60 mA maximum program current
    - 400 µA typical standby current
• JEDEC standard software, packages and pinouts
    - 32-pin TSOP
    - 32-pin PLCC
• Detection of program/erase cycle completion
    - DQ7 DATA polling
    - DQ6 toggle bit
• Erase suspend/resume
    - Supports reading data from or programming data to a sector not being erased
• Low VCC write lock-out below 2.8V

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零件编号
产品描述 (功能)
PDF
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