Product Overview
The AT25XE161D is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer and connected applications. It is optimized for low-energy applications and can be operated using modern Lithium battery technologies over a wide input voltage range of 1.65 V - 3.6 V.

The AT25XE161D is ideally suited for systems in which program code is shadowed from Flash memory into embedded or external
RAM (code shadow) for execution, and where small amounts of data are stored and updated locally in the Flash memory.

The erase block sizes of the AT25XE161D have been optimized to meet the needs of todays code and data storage applications. The device supports 256-byte page erase, as well as 4 kiloByte (kB), 32 kB, and 64 kB block erase operations and a full-chip erase. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.

The device also includes an active interrupt allowing the host to sleep during lengthy programming or erase operations, allowing the memory device to wake the MCU when completed, and optimized energy consumption and class-leading 7nA ultra-deep power-down modes. The device contains four specialized 128-byte One-Time Programmable (OTP) security registers that can be used to store a unique device ID and locked key storage.

Specifically designed for use in a wide variety of systems, the AT25XE161D supports read, program, and erase operations. No separate voltage is required for programming and erasing.

Throughout this document, the term Multi-I/O is used generically to refer to all of the multiple I/O modes, including dual, quad, and XiP.