Description
The ATF-25735 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

FEATUREs
• High Output Power: 19.0 Bm Typical P 1 dBat 4 GHz
• High Gain: 12.5 dB Typical G 1 dB at 4 GHz
• Low Noise Figure: 1.2 dB Typical at 4 GHz
• Cost Effective Ceramic Microstrip Package