B1162 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
B1162
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- :V(BR)CEO=-160V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD1717
APPLICATIONS
• Designed for high power amplifier applications
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