B1430 数据手册 ( 数据表 ) - Inchange Semiconductor
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B1430
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Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -2A)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) B
APPLICATIONS
·Designed for low-frequency power amplifiers and low speed switching applications.
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