DESCRIPTION
This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.042Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS