Product description
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz.

FEATURE list
• Low inductance LS = 0.2 nH (typical)
• Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz
• TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print
• Pb-free, RoHS compliant and halogen free

Potential applications
For mixers and detectors in:
• Radar systems and modules