FEATURES
♦ For general purpose applications.
♦ This diode features low turn-on voltage. 
   The devices are protected by a PN
   junction guard ring against excessive voltage, 
   such as electrostatic discharges.
♦ Metal-on-silicon Schottky barrier device which is
   protected by a PN junction guard ring. The low 
   forward voltage drop and fast switching make it ideal
   for protection of MOS devices, steering, biasing and
   coupling diodes for fast switching and low logic level
   applications.
♦ This diode is also available in the Mini-MELF case
   with the type designation BAS86.

MECHANICAL DATA
   Case: DO-35 Glass Case
   Weight: approx. 0.13 g