datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Renesas Electronics  >>> BB305MEW-TL-E PDF

BB305MEW-TL-E 数据手册 ( 数据表 ) - Renesas Electronics

BB305M image

零件编号
BB305MEW-TL-E

Other PDF
  no available.

PDF
DOWNLOAD     

page
10 Pages

File Size
195.9 kB

生产厂家
Renesas
Renesas Electronics Renesas

Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Superior cross modulation characteristics.
• High gain; (PG = 28 dB typ. at f = 200 MHz)
• Wide supply voltage range; Applicable with 5V to 9V supply voltage.
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

零件编号
产品描述 (功能)
PDF
生产厂家
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]