Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

FEATUREs
• BVCEO > 80V
• Ic = 1A High Continuous Collector Current
• ICM = 2.0A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
• Epitaxial Planar Die Construction
• Complementary PNP types: BCX5316Q
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)

APPLICATIONs
• Automotive
• Medium Power Switching or Amplification Applications
• AF Driver and Output Stages