Complementary Silicon Plastic Power Transistors
These devices are designed for use in general purpose amplifier and switching applications.
FEATUREs
• Collector − Emitter Saturation Voltage −
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
• Collector Emitter Sustaining Voltage −
VCEO(sus)
= 80 Vdc (Min) − BD243B, BD244B
= 100 Vdc (Min) − BD243C, BD244C
• High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Pb−Free Packages are Available*