BD637 数据手册 ( 数据表 ) - Inchange Semiconductor
零件编号
BD637
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Inchange Semiconductor
DESCRIPTION
• DC Current Gain - : hFE = 40(Min.)@ IC= 25mA
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.)
• Complement to Type BD638
APPLICATIONS
• Designed for amplifier and switching applications.
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