BD638 数据手册 ( 数据表 ) - Inchange Semiconductor
零件编号
BD638
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Inchange Semiconductor
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
·Complement to Type BD637
APPLICATIONS
·Designed for amplifier and switching applications.
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