BD650 数据手册 ( 数据表 ) - Inchange Semiconductor
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BD650
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Inchange Semiconductor
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO = -100V(Min)
·High DC Current Gain : hFE= 750(Min) @IC= -3A
·Low Saturation Voltage
·Complement to Type BD649
APPLICATIONS
·Designed for use as complementary AF push-pull output stage applications
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