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BD6665FM 数据手册 ( 数据表 ) - ROHM Semiconductor

BD6665FM image

零件编号
BD6665FM

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2 Pages

File Size
69.2 kB

生产厂家
ROHM
ROHM Semiconductor ROHM

Description
The BD6665FM has achieved high-efficiency and low power consumption due to the adoption of MOSFET output and direct PWM drive. Power save circuit, current limit circuit, FG three phase synthesis output, hall bias, reverse protection circuit, short brake SW, and rotation direction detection terminal are incorporated. The result is a multi-function and high-performance IC.
   
Features
1) Direct PWM drive
2) Built-in power save circuit
3) Built-in current limit circuit
4) Built-in FG three-phase synthesis output
5) Built-in hall bias
6) Built-in reverse protection circuit
7) Low power consumption due to MOSFET output
8) Built-in short brake SW
9) Built-in rotation direction detection terminal
   
Applications
    CD-ROM/RW
   

Page Link's: 1  2 

零件编号
产品描述 (功能)
PDF
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