BD675 数据手册 ( 数据表 ) - New Jersey Semiconductor
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BD675
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New Jersey Semiconductor
This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications.
FEATUREs
• High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc
• Monolithic Construction
• BD675. 675A, 677, 677A. 679, 679A, 681are complementary with BD676, 676A, 678. 678A, 680, 680A, 682
• BD677. 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
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