BD952 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
BD952
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2 Pages
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
• DC Current Gain-
: hFE= 40(Min)@ IC= -500mA
• Complement to Type BD951
APPLICATIONS
• Designed for power amplifier and switching applications
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