BDT61B 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
BDT61B
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New Jersey Semiconductor
DESCRIPTION
• DC Current Gain -hFE = 750(Min)@ IC= 1.5A
• Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C
• Complement to Type BDT60/A/B/C
APPLICATIONS
• Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications
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