BFP650F(2007) 数据手册 ( 数据表 ) - Infineon Technologies
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BFP650F
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Infineon Technologies
NPN Silicon Germanium RF Transistor*
• For medium power amplifiers and driver stages
• High OIP3 and P-1dB
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
Noise figure F = 0.8 dB at 1.8 GHz
• 70 GHz fT- Silicon Germanium technology
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description
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