General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

FEATUREs and benefits
■ Low noise high gain microwave transistor
■ Noise figure (NF) = 0.8 dB at 5.8 GHz
■ High maximum power gain 18.5 dB at 5.8 GHz
■ 110 GHz fT silicon germanium technology

APPLICATIONs
■ 2nd LNA stage and mixer stage in DBS LNB’s
■ Low noise amplifiers for microwave communications systems
■ Ka band oscillators DRO’s
■ Low current battery equipped applications
■ Microwave driver / buffer applications
■ Wi-Fi / WLAN / WiMAX
■ GPS
■ RKE
■ AMR
■ ZigBee
■ LTE, cellular, UMTS
■ SDARS first stage LNA
■ FM radio
■ Mobile TV
■ Bluetooth