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BGX710X 数据手册 ( 数据表 ) - NXP Semiconductors.

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零件编号
BGX710X

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NXP
NXP Semiconductors. NXP

Designed for high linearity and low noise floor, these IQ modulators operate between 400 MHz and 4 GHz, while consuming 10% less current than the closest competition competitive solution (<1 W). The power down mode enables even greater levels of power reductions down to more than 6 mA. Strong RF performance is achieved due to the monotonic IP3o behavior versus frequency, the lowest unadjusted carrier feed through and highest unadjusted sideband suppression in the market. Additionally, flexibility interfacing with any DAC is possible from the RF performance independent of common mode voltage.


KEY FEATUREs
► IQ modulator performances independent of the IQ common mode voltage (Vcm = 0.25 to 3.3 V)
► High linearity (IP3o = 27 dBm)
► Flat gain between 400 MHz and 4 GHz (less than 0.5dB variation)
► High RF output power for 1Vpp differential I/Q input (BGX7101: 4 dBm, BGX7100: -0.2 dBm)
► Very low noise floor (-158 dBm/Hz)
► Monotonic IP3 o behavior vs frequency
► Lowest unadjusted Carrier Feedthrough (-50 dBm at -7 dBm output power @ 1960 MHz)
► Best in class unadjusted sideband suppression (45 dBc at -7 dBm output power @ 1960 MHz)
► 1dB IQ baseband bandwidth (BGX7101: 650 MHz, BGX7100: 400 MHz)
► Low power consumption of < 1 W
► Fast power-down feature (<1µs) via Pon/off pin
► ESD protection >2 kV HBM, 650 V FCDM on all pins


APPLICATIONs
► Macro, micro, and femto base stations
► Point-to-point backhaul repeaters
► Software-defned radios
► Telecom towers, remote radio units
► Cable modem termination system
► RF vector signal generators and other measurement instruments

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