General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

FEATUREs
■ Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
   of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %:
   ◆ Output power = 120 W
   ◆ Gain = 11 dB
   ◆ Efficiency = 43 %
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (3.1 GHz to 3.5 GHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
   range