[ELEFLOW TECHNOLOGIES]

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

FEATURES:
∗ Multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal matching to achieve an optimum wideband capability and high power gain
* The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119).