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BS616LV8019 数据手册 ( 数据表 ) - Brilliance Semiconductor

BS616LV8019 image

零件编号
BS616LV8019

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9 Pages

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265 kB

生产厂家
BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS616LV8019 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a range of 4.5V to 5.5V supply voltage.


FEATURES
• Vcc operation voltage : 4.5~5.5V
• Very low power consumption :
    Vcc = 5.0V C-grade: 75mA (@55ns) operating current
                       I -grade: 76mA (@55ns) operating current
                       C-grade: 60mA (@70ns) operating current
                       I -grade: 61mA (@70ns) operating current
                       8.0uA (Typ.) CMOS standby current
• High speed access time :
    -55 55ns
    -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin

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零件编号
产品描述 (功能)
PDF
生产厂家
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit ( Rev : 2004 )
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit ( Rev : 2004 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 512K X 16 bit ( Rev : 2008 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power CMOS SRAM 512K X 16 bit ( Rev : 2008 )
Brilliance Semiconductor

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