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BS616UV1010(2008) 数据手册 ( 数据表 ) - Brilliance Semiconductor

BS616UV1010 image

零件编号
BS616UV1010

Other PDF
  2001   lastest PDF  

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page
11 Pages

File Size
231.6 kB

生产厂家
BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 by 16 bits and operates form a wide range of 1.9V to 3.6V supply voltage.


FEATURES
• Wide VCC low operation voltage : 1.9V ~ 3.6V
• Ultra low power consumption :
    VCC = 2.0V Operation current : 15mA (Max.) at 100ns
                                                       1.0mA (Max.) at 1MHz
                        Standby current : 0.5/1uA (Max.)at 70/85°C
    VCC = 3.0V Operation current : 20mA (Max.) at 100ns
                                                       2.0mA (Max.) at 1MHz
                        Standby current : 1/1.5uA (Max.) at 70/85°C
• High speed access time :
    -10 100ns (Max.)
• Automatic power down when chip is deselected
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin.
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V

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零件编号
产品描述 (功能)
PDF
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