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BS62LV256DC55 数据手册 ( 数据表 ) - Brilliance Semiconductor

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零件编号
BS62LV256DC55

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10 Pages

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238.5 kB

生产厂家
BSI
Brilliance Semiconductor BSI

DESCRIPTION
TheBS62L V256 is a high performance,very low power CMOS Static Random  Access  Memory  organized  as  32,768  by  8  bits  and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced  CMOS  technology  and  circuit  techniques  provide  both high  speed  and  low  power  features  with  typical  CMOS  standby current  of  0.01uA  and  maximum  access  time  of  70ns  in  3.0V operation.


FEATURES
• Wide VCC operation voltage : 2.4V ~ 5.5V
• Very low powerconsumption:
    VCC = 3.0V  Operationcurrent :  25mA (Max.)  at 70ns
                                                        1mA (Max.)  at 1MHz
                         Standby current :  0.01uA(Typ.) at 25OC
   VCC = 5.0V  Operationcurrent :  40mA (Max.)  at 55ns
                                                       2mA (Max.)  at 1MHz
                         Standby current :  0.4uA (Typ.)  at 25OC
• Highspeed access time:
  -55  55ns(Max.) at VCC: 4.5~5.5V
  -70  70ns(Max.) at VCC: 3.0~5.5V
• Automatic power down whenchip is deselected
• Easy expansion with CE and OE options
• Threestate outputs and TTLcompatible
• Fully static operation
• Data retentionsupply voltage as low as 1.5V

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零件编号
产品描述 (功能)
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