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BS62LV256DI 数据手册 ( 数据表 ) - Unspecified1

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零件编号
BS62LV256DI

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The BS62LV256 is a high performance, very low  power CMOS Static Random Access Memory organized as 32,768  words  by 8 bits and operates from a wide range  of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.01uA and maximum access time of 70ns in 3V operation.

BS62LV256DI

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零件编号
产品描述 (功能)
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生产厂家
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
Brilliance Semiconductor
Very Low Power 32k x 8 CMOS SRAM
Macronix International
Very Low Power / Voltage CMOS SRAM 32K X 8bit
Wing Shing International Group
32K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc
32K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor
32K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc
32K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc
32K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc

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