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BTS410H2 数据手册 ( 数据表 ) - Infineon Technologies

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零件编号
BTS410H2

产品描述 (功能)

Other PDF
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page
13 Pages

File Size
166.4 kB

生产厂家
Infineon
Infineon Technologies Infineon

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.


FEATUREs
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
    auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
   
Application
• µC compatible power switch with diagnostic feedback
    for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses
    and discrete circuits   
   

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零件编号
产品描述 (功能)
PDF
生产厂家
Smart Highside Power Switch
Siemens AG
Smart Highside Power Switch
Siemens AG
Smart Highside Power Switch ( Rev : 2003 )
Infineon Technologies
Smart Highside Power Switch
Infineon Technologies
Smart Highside Power Switch
Siemens AG
Smart Highside Power Switch
Infineon Technologies
Smart Highside Power Switch
Infineon Technologies
Smart Highside Power Switch
Siemens AG
Smart Highside Power Switch
Siemens AG
Smart Highside Power Switch
Infineon Technologies

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