datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  STMicroelectronics  >>> C12IE90HV PDF

C12IE90HV 数据手册 ( 数据表 ) - STMicroelectronics

C12IE90HV image

零件编号
C12IE90HV

Other PDF
  no available.

PDF
DOWNLOAD     

page
11 Pages

File Size
209.3 kB

生产厂家
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The STC12IE90HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.
It is designed for use in Gate Driven based topologies.

General features
■ High voltage / high current Cascode configuration
■ Low equivalent on resistance
■ Very fast-switch up to 150 kHz
■ Squared RBSOA up to 900V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time


APPLICATIONs
■ Aux Smps For Three Phase Mains


零件编号
产品描述 (功能)
PDF
生产厂家
Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.083 Ω
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ω
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ω
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT® 1500 V - 5 A - 0.12 Ω
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT® 1500 V - 8 A - 0.10 Ω ( Rev : 2006 )
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT® 1500 V - 5 A - 0.12 Ω
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω
STMicroelectronics
Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 2200 V - 3 A - 0.33 Ω
STMicroelectronics

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]