C3144 数据手册 ( 数据表 ) - New Jersey Semiconductor
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C3144
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
• High DC Current Gain : hFE=2000(Min)@lc=1.5A
• Wide Area of Safe Operation
• Complement to Type 2SA1258
APPLICATIONS
• Designed for high-speed drivers applications.
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