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C3355 数据手册 ( 数据表 ) - NEC => Renesas Technology

2SC3355 image

零件编号
C3355

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8 Pages

File Size
83.4 kB

生产厂家
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.


FEATURES
• Low Noise and High Gain
   NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
   NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
   MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz


零件编号
产品描述 (功能)
PDF
生产厂家
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Inchange Semiconductor
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
Renesas Electronics

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