Description
The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.

Main Features
■ Broad band performance 36-44GHz
■ 3dB noise figure
■ 19dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 45mA
■ 20dBm 3rd order intercept point
■ Chip size : 1.670 x 0.970x 0.1mm