生产厂家
United Monolithic Semiconductors
Description
The monolithic microwave IC (MMIC) in the package is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
Main Features
■ Broadband performance: 24-30GHz
■ Small signal gain 21dB (typical)
■ Output power (P-1dB) 24dBm (typical)
■ Low DC power consumption: 460mA
■ SMD leadless package
■ Dimensions: 6.35 x 6.35 x 0.97 mm3
24-30GHz Medium Power Amplifier
United Monolithic Semiconductors
24-30GHz Low Noise, Variable Gain Amplifier
United Monolithic Semiconductors
24-30GHz Integrated Down Converter ( Rev : 2001 )
United Monolithic Semiconductors
27-30GHz High Power Amplifier ( Rev : 2007 )
United Monolithic Semiconductors
24-30GHz Integrated Down Converter
United Monolithic Semiconductors
27-30GHz High Power Amplifier
United Monolithic Semiconductors
20-30GHz High Power Amplifier
United Monolithic Semiconductors
20-30GHz Low Noise Amplifier
United Monolithic Semiconductors
20-30GHz Low Noise Amplifier
United Monolithic Semiconductors
20-30GHz Low Noise Amplifier ( Rev : 2003 )
United Monolithic Semiconductors