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CP305 数据手册 ( 数据表 ) - Central Semiconductor

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零件编号
CP305

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  2002  

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Central Semiconductor Central-Semiconductor

PROCESS DETAILS

Process EPITAXIAL PLANAR
Die Size 31 x 31 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 5.9 x 11.8 MILS
Emitter Bonding Pad Area 6.5 x 13.8 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å

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Small Signal Transistors NPN - High Current Transistor Chip ( Rev : 2005 )
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Small Signal Transistors NPN - High Current Transistor Chip
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Small Signal Transistor PNP - High Current Transistor Chip
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Small Signal Transistor PNP - High Current Transistor Chip ( Rev : 2010 )
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Small Signal Transistor PNP - High Current Transistor Chip
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