CP388X 数据手册 ( 数据表 ) - Central Semiconductor
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CP388X
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 13 x 13 MILS
Die Thickness 5.9 MILS
Base Bonding Pad Area 3.9 x 3.9 MILS
Emitter Bonding Pad Area 5.4 x 5.4 MILS
Top Side Metalization Al-Si - 17,000Å
Back Side Metalization Au - 12,000Å
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Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip ( Rev : 2002 )
Central Semiconductor
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