CP757X 数据手册 ( 数据表 ) - Central Semiconductor
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CP757X
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Central Semiconductor
PROCESS DETAILS
Die Size 22 x 17 MILS
Die Thickness 5.9 MILS
Gate Bonding Pad Area 3.9 x 3.9 MILS
Source Bonding Pad Area 14 x 9 MILS
Top Side Metalization Al-Si - 30,000Å
Back Side Metalization Au - 12,000Å
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