CPD05 数据手册 ( 数据表 ) - Central Semiconductor
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CPD05
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Central Semiconductor
PROCESS DETAILS
Process GLASS PASSIVATED MESA
Die Size 51 x 51 MILS
Die Thickness 10.2 MILS
Anode Bonding Pad Area 36 x 36 MILS
Top Side Metalization Ni/Au - 5,000Å/2,000Å
Back Side Metalization Ni/Au - 5,000Å/2,000Å
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General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip ( Rev : 2003 )
Central Semiconductor
GLASS PASSIVATED GENERAL PURPOSE RECTIFIER ( Rev : 2019 )
Jiangsu Yutai Electronics Co., Ltd
GLASS PASSIVATED GENERAL PURPOSE RECTIFIER ( Rev : 2019 )
Jiangsu Yutai Electronics Co., Ltd
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