The CPD102X-CMPD6263 is a silicon epitaxial planar Schottky diode designed for switching applications requiring low forward voltage drop.

MECHANICAL SPECIFICATIONS:
   Die Size 9.0 x 9.0 MILS
   Die Thickness 5.9 MILS
   Anode Bonding Pad Size 4.8 MILS DIAMETER
   Top Side Metalization Al - 30,000Å
   Back Side Metalization Au - 9,000Å
   Scribe Alley Width 2.4 MILS
   Wafer Diameter 5 INCHES
   Gross Die Per Wafer 210,600