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CPD104R 数据手册 ( 数据表 ) - Central Semiconductor

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零件编号
CPD104R

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Central-Semiconductor
Central Semiconductor Central-Semiconductor

PROCESS DETAILS
   Die Size 14.6 x 14.6 MILS
   Die Thickness 3.9 MILS
   Anode Bonding Pad Area 11.8 x 11.8 MILS
   Top Side Metalization Al - 30,000Å
   Back Side Metalization Au - 12,000Å


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